Surface improvement of organic photoresists using a near-field-dependent etching method

• Felix J. Brandenburg,
• Tomohiro Okamoto,
• Hiroshi Saito,
• Benjamin Leuschel,
• Olivier Soppera and
• Takashi Yatsui

Beilstein J. Nanotechnol. 2017, 8, 784–788, doi:10.3762/bjnano.8.81

• reduction of the surface roughness was observed as compared to the 325 nm light. These results indicate that even wavelengths above 325 nm can cause surface roughness improvements without notably changing the structure of the photoresist. Keywords: near-field etching; organic photoresists; surface

• improvement; wavelength dependence; Introduction As the structures fabricated in the field of semiconductors has reached below 10 nm [1], and the pursuit of ever smaller node sizes continues, the impact of the surface roughness (SR) becomes increasingly critical [2]. In attempts to downscale the minimum